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Advanced Technical Information
HiPerFET TM
Power MOSFETs
Q-Class
IXFH 75N10Q
IXFT 75N10Q
V DSS
I D25
R DS(on)
= 100 V
= 75 A
= 20 m W
N-Channel Enhancement Mode
Avalanche Rated, High dv/dt
Low Gate Charge and Capacitances
t rr ￡ 200ns
Symbol
Test Conditions
Maximum Ratings
TO-247 AD (IXFH)
V DSS
V DGR
T J = 25 ° C to 150 ° C
T J = 25 ° C to 150 ° C; R GS = 1 M ?
100
100
V
V
V GS
V GSM
I D25
I DM
I AR
E AR
E AS
Continuous
Transient
T C = 25 ° C
T C = 25 ° C, pulse width limited by T JM
T C = 25 ° C
T C = 25 ° C
T C = 25 ° C
± 20
± 30
75
300
75
30
1.5
V
V
A
A
A
mJ
J
TO-268 (IXFT) Case Style
(TAB)
dv/dt
P D
T J
T JM
T stg
T L
I S ≤ I DM , di/dt ≤ 100 A/ μ s, V DD ≤ V DSS ,
T J ≤ 150 ° C, R G = 2 ?
T C = 25 ° C
1.6 mm (0.062 in.) from case for 10 s
5
300
-55 ... +150
150
-55 ... +150
300
V/ns
W
° C
° C
° C
° C
G = Gate
S = Source
Features
G
S
D = Drain
TAB = Drain
(TAB)
M d Mounting torque
Weight TO-247 AD
TO-268
Symbol Test Conditions
(T J = 25 ° C, unless otherwise specified)
V DSS V GS = 0 V, I D = 250 μ A
V GS(th) V DS = V GS , I D = 4 mA
1.13/10 Nm/lb.in.
6 g
4 g
Characteristic Values
Min. Typ. Max.
100 V
2.0 4 V
l
l
l
l
l
l
IXYS advanced low gate charge
process
International standard packages
Low gate charge and capacitance
- easier to drive
- faster switching
Low R DS (on)
Unclamped Inductive Switching (UIS)
rated
Molding epoxies meet UL 94 V-0
flammability classification
I GSS
V GS = ± 20 V DC , V DS = 0
± 100
nA
Easy to mount
Space savings
High power density
I DSS
R DS(on)
V DS = V DSS T J = 25 ° C
V GS = 0 V T J = 125 ° C
V GS = 10 V, I D = 0.5 I D25
Pulse test, t ≤ 300 μ s, duty cycle d ≤ 2 %
25
1
20
μ A
mA
m ?
Advantages
l
l
l
? 1999 IXYS All rights reserved
98550A (6/99)
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